1. Kugadzirwa kweSolvothermal
1. Mbichichiyero chezvinhu
Upfu hwezinc neupfu hweselenium zvinosanganiswa nechiyero che1:1 molar, uye mvura yakasanganiswa kana ethylene glycol inowedzerwa senzira yekunyungudutsa mvura..
2.Mamiriro ekuita
o Tembiricha yekuita: 180-220°C
Nguva yekuita: maawa 12-24
o Kumanikidzwa: Chengetedza kumanikidzwa kwaunozvigadzira wega muketuru yemhinduro yakavharwa
Kusanganiswa kwakananga kwezinc neselenium kunofambiswa nekupisa kuti kugadzirwe makristaro ezinc selenide ane nanoscale 35.
3.Maitiro ekurapa mushure mekurapwa
Mushure mekugadziriswa, yakaiswa mu centrifuge, yakagezwa ne diluted ammonia (80 °C), methanol, uye yakaomeswa ne vacuum cleaner (120 °C, P₂O₅).btainupfu > 99.9% kuchena 13.
2. Nzira yekuisa mhute yemakemikari
1.Kugadziriswa kwezvishandiso zvepakutanga
o Kuchena kwe zinc mbishi zvinhu ≥ 99.99% uye kunoiswa mu graphite crucible
o Gasi rehydrogen selenide rinotakurwa negasi reargon rinotakura6.
2.Kudzora tembiricha
o Nzvimbo yekupisa zinc: 850-900°C
o Nzvimbo yekuiswa: 450-500°C
Kuiswa kwe zinc vapor ne hydrogen selenide nenzira yekuisa divi nekupisa kwe 6.
3.Magasi egasi
o Kuyerera kweArgon: 5-10 L/min
o Kumanikidzwa kwehydrogen selenide:0.1-0.3 atm
Mwero wekudonhedzwa kwemvura unogona kusvika 0.5-1.2 mm/awa, zvichikonzera kuumbwa kwe polycrystalline zinc selenide ine ukobvu hwe60-100 mm..
3. Nzira yekugadzira zvakananga yechikamu chakasimba
1. Mbichikubata zvinhu
Mushonga we zinc chloride wakasanganiswa ne oxalic acid solution kuti ugadzire zinc oxalate precipitate, iyo yakaomeswa ndokukuyiwa ndokusanganiswa ne selenium powder pachiyero che 1:1.05 molar 4..
2.Magadzirirwo ekuita kwekupisa
o Tembiricha yechoto chevacuum chubhu: 600-650°C
o Chengeta nguva inodziya: maawa 4-6
Upfu hwezinc selenide hune saizi ye2-10 μm hunogadzirwa ne solid-phase diffusion reaction 4.
Kuenzanisa maitiro akakosha
| nzira | Kunyorwa kwenzvimbo yechigadzirwa | Saizi yezvimedu/ukobvu | Kupenya kwekristaro | Minda yekushandiswa |
| Nzira yeSolvothermal 35 | Nanoballs/tsvimbo | 20-100 nm | Cubic sphalerite | Zvishandiso zvemagetsi zveOptoelectronic |
| Kuisa utsi hwemhepo 6 | Zvivharo zvePolycrystalline | 60-100 mm | Chimiro chehexagonal | Magirazi eInfrared |
| Nzira yechikamu chakasimba 4 | Upfu hwakakura se micron | 2-10 μm | Chikamu cheCubic | Zvinhu zvinotangira zvinhu zve infrared |
Pfungwa huru dzekudzora maitiro akakosha: nzira ye solvothermal inofanira kuwedzera ma surfactants akadai se oleic acid kuti agadzirise chimiro 5, uye vapor deposition inoda kuti substrate roughness ive < Ra20 kuti ive nechokwadi chekuti deposition yacho yakafanana 6.
1. Kuisa utsi hwemuviri (PVD).
1.Nzira yeTekinoroji
o Zinc selenide raw material inopfungaidzwa munzvimbo isina chinhu uye inoiswa pamusoro pe substrate uchishandisa sputtering kana thermal evaporation technology12.
o Manyuko emvura e zinc ne selenium anopiswa kusvika pakupisa kwakasiyana (nzvimbo yemvura ye zinc: 800–850 °C, nzvimbo yemvura ye selenium: 450–500 °C), uye chiyero che stoichiometric chinodzorwa nekudzora mwero wemvura inobuda.12.
2.Kudzora parameter
o Muchina wekuchenesa: ≤1×10⁻³ Pa
o Tembiricha yekutanga: 200–400°C
o Mwero wekushandiswa kwemari:0.2–1.0 nm/s
Mafirimu eZinc selenide ane ukobvu hwe50–500 nm anogona kugadzirwa kuti ashandiswe mu infrared optics 25.
2Nzira yekugadzira bhora remakanika
1.Kubata zvinhu zvisina kugadzirwa
o Upfu hwezinc (purity≥99.9%) hunosanganiswa ne selenium powder pa 1:1 molar ratio uye hunoiswa mubhodhoro resimbi isina ngura 23.
2.Maitiro ekugadzirisa
o Nguva yekukuya bhora: maawa gumi kusvika makumi maviri
Kumhanya: 300–500 rpm
o Chiyero chePellet: 10:1 (mabhora ekukuya ezirconia).
Zvidimbu zvidiki zvezinc selenide zvine saizi ye50–200 nm zvakagadzirwa nekuita kwekugadzira, zvine kuchena kwe>99% 23.
3. Nzira yekudzvanya inopisa
1.Kugadzirira kwezvichaitika
o Zinc selenide nanopowder (saizi yezvikamu < 100 nm) yakagadzirwa nenzira ye solvothermal sezvinhu zvakagadziriswa 4.
2.Maparamita ekuchenesa
o Tembiricha: 800–1000°C
o Kumanikidzwa: 30–50 MPa
o Chengeta uchidziya: maawa 2–4
Chigadzirwa ichi chine huwandu hwe>98% uye chinogona kugadzirwa kuita zvinhu zve optical zvakaita se infrared windows kana lenses..
4. Molecular beam epitaxy (MBE).
1.Nzvimbo yekupisa yakawanda-yakakwira
o Muchina wekuchenesa: ≤1×10⁻⁷ Pa
o Miti ye zinc ne selenium inodzora kufamba kwemvura kuburikidza ne evaporation source ye elektron beam6.
2.Zviyero zvekukura
o Tembiricha yepasi: 300–500°C (GaAs kana substrates dzesafire ndidzo dzinowanzoshandiswa).
o Mwero wekukura:0.1–0.5 nm/s
Mafirimu matete e-single-crystal zinc selenide anogona kugadzirwa muhukuru hwe0.1–5 μm yemidziyo yemagetsi inopenya zvikuru56.
Nguva yekutumira: Kubvumbi-23-2025