1. Solvothermal synthesis
1. Mbishizvinhu ratio,
Zinc poda uye selenium poda inosanganiswa pa1: 1 molar ratio, uye mvura yakasvibiswa kana ethylene glycol inowedzerwa seyakanyungudutsa 35..
2 .Maitiro ekuita
o Kuita tembiricha: 180-220°C
o Kuita nguva: 12-24 maawa
o Dzvinyiriro: Chengetedza kudzvanywa kwega-yakagadzirwa muketani yakavharwa yekuita
Iko kusanganiswa kwakananga kwezingi uye selenium kunofambiswa nekudziya kugadzira nanoscale zinc selenide makristasi 35..
3.Mushure mekurapa maitiro,
Mushure mekuita, yaive centrifuged, yakagezwa ne dilute ammonia (80 ° C), methanol, uye vacuum yakaomeswa (120 ° C, P₂O₅).btainhupfu> 99.9% kuchena 13.
2. Chemical vapor deposition method
1.Raw material pretreatment
o Kuchena kwe zinc raw material ndeye ≥ 99.99% uye yakaiswa mu graphite crucible.
o Hydrogen selenide gasi inotakurwa ne argon gas carry6.
2 .Kudzora tembiricha
o Zinc evaporation zone: 850-900°C
o Deposition zone: 450-500°C
Directional kuisa zinc mhute uye hydrogen selenide netembiricha gradient 6.
3 .Gasi parameters
o Kuyerera kweArgon: 5-10 L / min
o Kudzvinyirirwa kwechidimbu chehydrogen selenide:0.1-0.3 atm
Deposition rates inogona kusvika 0.5-1.2 mm/h, zvichikonzera kuumbwa kwe60-100 mm gobvu polycrystalline zinc selenide 6..
3. Solid-phase yakananga synthesis nzira
1. Mbishikubata zvinhu,
Iyo zinc chloride solution yakaitwa neoxalic acid solution kuti iite zinc oxalate precipitate, iyo yakaomeswa nevhu uye yakasanganiswa neselenium powder pachiyero che1: 1.05 molar 4.
2 .Thermal reaction parameters
o Vacuum chubhu choto tembiricha: 600-650°C
o Chengetedza nguva inodziya: maawa 4-6
Zinc selenide poda ine chidimbu saizi ye2-10 μm inogadzirwa nechakasimba-chikamu diffusion reaction 4..
Kuenzanisa maitiro anokosha
| nzira | Chigadzirwa topography | Chikamu saizi/ukobvu | Crystallinity | Minda yekushandiswa |
| Solvothermal nzira 35 | Nanoballs/tsvimbo | 20-100 nm | Cubic sphalerite | Optoelectronic zvishandiso |
| Kuiswa kwevapor 6 | Polycrystalline blocks | 60-100 mm | Hexagonal chimiro | Infrared optics |
| Solid-phase nzira 4 | Micron-saizi poda | 2-10 μm | Cubic chikamu | Infrared material precursors |
Mapoinzi akakosha ekugadzirisa kwakakosha maitiro: iyo solvothermal nzira inoda kuwedzera ma surfactants akadai se oleic acid kudzora iyo morphology 5, uye iyo vapor deposition inoda iyo substrate roughness kuve <Ra20 kuve nechokwadi chekufanana kwekuisa 6..
1. Physical vapor deposition (PVD).
1 .Vadivelu Comedy Technology Path
o Zinc selenide raw material inonyungudutswa munzvimbo ine vacuum uye inoiswa pane substrate pamusoro uchishandisa sputtering kana thermal evaporation tekinoroji12.
o Zvitubu zvezinc uye selenium zvinopisa kune zvakasiyana tembiricha (zinc evaporation zone: 800–850 °C, selenium evaporation zone: 450–500 °C), uye chiyero che stoichiometric chinodzorwa nekudzora mwero wekubuda.,12.
2 .Parameter control
o Vacuum: ≤1×10⁻³ Pa
o Basal tembiricha: 200–400°C
o Deposition rate:0.2–1.0 nm/s
Zinc selenide mafirimu ane ukobvu hwe50-500 nm anogona kugadzirirwa kushandiswa mune infrared optics 25..
2. Mechanical bhora milling nzira
1.Raw material kubata
o Zinc poda (kuchena≥99.9%) inosanganiswa neselenium poda pachiyero che1: 1 molar uye inotakurwa musimbi isina tsvina yeguyo chirongo 23..
2 .Process parameters
o Bhora kukuya nguva: 10–20 maawa
Kumhanya: 300-500 rpm
o Pellet ratio: 10: 1 (zirconia grinding balls).
Zinc selenide nanoparticles ine chidimbu saizi ye50-200 nm yakagadzirwa nemagetsi alloying reactions, nekuchena kwe> 99% 23..
3. Kupisa kudzvanya sintering nzira
1 .Precursor preparation
o Zinc selenide nanopowder (particle size <100 nm) yakagadzirwa ne solvothermal nzira seyakasvibirira 4.
2 .Sintering parameters
o Tembiricha: 800–1000°C
o Kudzvinyirira: 30–50 MPa
o Ramba uchidziya: maawa 2–4
Chigadzirwa chacho chine density ye> 98% uye inogona kugadziridzwa kuita yakakura-fomati yemaziso zvinhu senge infrared windows kana lenzi 45..
4. Molecular beam epitaxy (MBE).
1.Ultra-yakakwirira vacuum nharaunda
o Vacuum: ≤1×10⁻⁷ Pa
o Zinc uye selenium molecular matanda anonyatso kudzora kuyerera kuburikidza neelectron beam evaporation source6.
2.Kukura parameters
o Base tembiricha: 300-500 ° C (GaAs kana sapire substrates inowanzoshandiswa).
o Chiyero chekukura:0.1–0.5 nm/s
Single-crystal zinc selenide mafirimu matete anogona kugadzirirwa muhupamhi hwe 0.1-5 μm kune yakakwirira-chaiyo optoelectronic zvishandiso56.
Nguva yekutumira: Kubvumbi-23-2025