1. Nhanganyaya

Zinc telluride (ZnTe) yakakosha II-VI boka semiconductor zvinhu zvine yakananga bandgap chimiro. Patembiricha yepakamuri, bhendi rayo rinosvika 2.26eV, uye inowana mashandisirwo akafara mumidziyo yeoptoelectronic, maseru ezuva, madhizaini emagetsi, uye mamwe minda. Ichi chinyorwa chichapa sumo yakadzama yemaitiro akasiyana-siyana ekugadzira zinc telluride, kusanganisira solid-state reaction, vapor transport, solution-based ways, molecular beam epitaxy, etc. Nzira imwe neimwe ichanyatsotsanangurwa maererano nemitemo yayo, maitiro, zvakanakira uye zvisingabatsiri, uye zvakakosha kufunga.

2. Solid-State Reaction Method yeZnTe Synthesis

2.1 Nheyo

Iyo solid-state reaction method ndiyo yakajairika nzira yekugadzira zinc telluride, apo yakakwira-kuchena zinc uye tellurium inonangana nekupisa kwakanyanya kuumba ZnTe:

Zn + Te → ZnTe

2.2 Detailed Procedure

2.2.1 Gadziriro Yezvinhu Mbishi

1. Kusarudzwa Kwezvinhu: Shandisa yakakwirira-kuchena zinc granules uye tellurium mapundu nekuchena ≥99.999% sekutanga zvinhu.
2. Material Pretreatment:
   • Zinc kurapwa: Tanga wanyura mu dilute hydrochloric acid (5%) kweminiti 1 kuti ubvise maokisi epamusoro, sukurudza nemvura yakasvibiswa, geza neanhydrous ethanol, uye pakupedzisira wooma muvheni yevacuum pa60 ° C kwemaawa maviri.
   • Tellurium treatment: Tanga wanyura mu aqua regia (HNO₃:HCl=1:3) kwemasekonzi makumi matatu kuti ubvise maokisi epamusoro, sukurudza nemvura yakasvibiswa kusvikira wasarerekera, geza neanhydrous ethanol, uye wozoomesa muchoto chevacuum pa80°C kwemaawa matatu.
3. Kuyera: Kuyera zviwanikwa mu stoichiometric ratio (Zn:Te=1:1). Tichifunga nezvekugoneka zinc volatilization pakupisa kwakanyanya, 2-3% yakawandisa inogona kuwedzerwa.

2.2.2 Kusanganiswa kwezvinhu

1. Kukuya nekusanganisa: Isai yakayerwa zinc ne tellurium mu agate mortar woikuya kwemaminetsi makumi matatu mubhokisi regirovhosi rakazadzwa ne argon kusvika zvasanganiswa.
2. Pelletizing: Isa hupfu hwakasanganiswa muforoma uye wodzvanya muma pellets ane madhayamita e10-20mm pasi pe10-15MPa kumanikidzwa.

2.2.3 Kugadzirira Kwemudziyo

1. Quartz Tube Treatment: Sarudza high-purity quartz tubes (mukati dhayamita 20-30mm, mudhuri ukobvu 2-3mm), tanga wanyura muaqua regia kwemaawa makumi maviri nemana, sukurudza zvakakwana nemvura ine deionized, woomesa muovheni pa120°C.
2. Kubuda: Isa iyo mbishi mapellet muchubhu yequartz, batanidza kune vacuum system, uye buda kuenda ku ≤10⁻³Pa.
3. Kuisa chisimbiso: Nama chubhu yequartz uchishandisa murazvo wehydrogen-oxygen, uchisimbisa hurefu hwekuvharisa ≥50mm kuitira kusapinda mhepo.

2.2.4 High-Temperature Reaction

1. Kutanga Kupisa Danho: Isa chisimbiso chequartz chubhu muchoto chechubhu uye kupisa kusvika ku400 ° C pamwero we 2-3 ° C / min, kubata kwemaawa gumi nemaviri kuti ubvumire kuita kwekutanga pakati pe zinc uye tellurium.
2. Chechipiri Kupisa Danho: Ramba uchipisa kusvika ku950-1050 ° C (pasi pe quartz softening point ye 1100 ° C) pa 1-2 ° C / min, kubata kwemaawa 24-48.
3. Tube Rocking: Panguva yekupisa kwepamusoro, isa choto pa45° maawa maviri oga oga uye zunza kakawanda kuti uve nechokwadi chekusanganiswa kwezvinoita.
4. Kutonhodza: ​​Mushure mekupedzwa kwekuita, tonhorera zvishoma nezvishoma kusvika kune tembiricha yekamuri pa 0.5-1 ° C/min kudzivirira kutsemuka kwemuenzaniso nekuda kwekushushikana kwekupisa.

2.2.5 Kugadziriswa Kwechigadzirwa

1. Kubvisa Chigadzirwa: Vhura iyo quartz chubhu mubhokisi regirovhosi uye bvisa maitiro echigadzirwa.
2. Kukuya: Gayazve chigadzirwa kuita upfu kuti ubvise chero chinhu chisina kugadziriswa.
3. Annealing: Anneal poda pa 600 ° C pasi pe argon atmosphere kwemaawa 8 kuti abvise kushungurudzika kwemukati uye kuvandudza crystallinity.
4. Hunhu: Ita XRD, SEM, EDS, nezvimwewo, kusimbisa chikamu kuchena uye kuumbwa kwemakemikari.

2.3 Maitiro Parameter Optimization

1. Tembiricha Kudzora: Yakanyanya kuita tembiricha i1000±20°C. Kudzikira tembiricha kunogona kukonzera kusakwana kuita, nepo tembiricha yepamusoro inogona kukonzera zinc volatilization.
2. Kudzora Nguva: Kubata nguva kunofanirwa kuve ≥24 maawa kuti ive nechokwadi chekuita kwakakwana.
3. Chiyero chekutonhodza: ​​Kunonoka kutonhora (0.5-1 ° C / min) kunobereka zviyo zvakakura zvekristaro.

2.4 Zvakanakira uye Zvakaipa Ongororo

Zvakanakira:

• Nyore maitiro, yakaderera midziyo zvinodiwa
• Inokodzera kugadzirwa kwebatch
• High chigadzirwa kuchena

Zvakaipa:

• High reaction tembiricha, kushandiswa kwesimba kwakanyanya
• Kugovera saizi yezviyo zvisina kufanana
• Inogona kunge iine zvidiki zvezvinhu zvisina kugadziriswa

3. Vapor Transport Method yeZnTe Synthesis

3.1 Nheyo

Iyo nzira yekufambisa mhute inoshandisa gasi rinotakura kutakura mhute inonaya kune yakaderera-tembiricha nzvimbo yekuisa, kuwana kwainoenda kukura kweZnTe nekudzora tembiricha. Iodine inowanzoshandiswa semumiririri wekutakura:

ZnTe(s) + I₂(g) ⇌ ZnI₂(g) + 1/2Te₂(g)

3.2 Detailed Procedure

3.2.1 Gadziriro Yezvinhu Mbishi

1. Kusarudzwa Kwezvinhu: Shandisa yakakwirira-kuchena ZnTe powder (kuchena ≥99.999%) kana stoichiometrically yakasanganiswa Zn uye Te powders.
2. Kugadzirira Kwemumiriri wekutakura: Kuchena kweiodine makristasi (kuchena ≥99.99%), kuyerwa kwe5-10mg/cm³ reaction tube volume.
3. Quartz Tube Kurapa: Zvakafanana seyakasimba-state maitiro maitiro, asi refu quartz machubhu (300-400mm) anodiwa.

3.2.2 Tube Loading

1. Kuiswa Kwezvinhu: Isa ZnTe poda kana Zn + Te musanganiswa pane imwe magumo equartz chubhu.
2. Iodine Kuwedzera: Wedzera makristasi ayodhine kune chubhu yequartz mubhokisi regirovhosi.
3. Kubuda: Enda ku ≤10⁻³Pa.
4. Kuisa chisimbiso: Chisimbiso nemurazvo wehydrogen-oxygen, uchichengeta chubhu yakachinjika.

3.2.3 Temperature Gradient Setup

1. Kupisa Kwenzvimbo Yekupisa: Isa ku850-900°C.
2. Cold Zone Temperature: Isa ku750-800°C.
3. Gradient Zone Kureba: Inenge 100-150mm.

3.2.4 Nzira yeKukura

1. Danho Rokutanga: Kupisa kusvika ku500 ° C pa 3 ° C / min, bata kwemaawa maviri kuti ubvumire kuita kwekutanga pakati peiodine uye zvigadzirwa.
2. Chechipiri Danho: Ramba uchipisa kune tembiricha yakatarwa, chengetedza tembiricha yekushisa, uye ukure kwemazuva 7-14.
3. Kutonhodza: ​​Mushure mekukura kwapera, inotonhorera kusvika kune tembiricha yekamuri pa 1°C/min.

3.2.5 Product Collection

1. Kuvhura Tube: Vhura chubhu yequartz mubhokisi regirovhosi.
2. Kuunganidza: Unganidza makristasi eZnTe pakupera kwechando.
3. Kuchenesa: Ultrasonically yakachena neanhydrous ethanol kwemaminitsi mashanu kubvisa pamusoro-adsorbed iodine.

3.3 Maitiro Ekudzora Mapoinzi

1. Iodine Amount Control: Iodine concentration inokanganisa kutakura kwekutakura; optimal range is 5-8mg/cm³.
2. Tembiricha Gradient: Chengetedza gradient mukati me50-100 ° C.
3. Nguva Yekukura: Kazhinji 7-14 mazuva, zvichienderana nehukuru hwekristaro hunodiwa.

3.4 Zvakanakira uye Zvakaipa Ongororo

Zvakanakira:

• Makristasi emhando yepamusoro anogona kuwanikwa
• Hukuru hwekristaro saizi
• Kuchena kwepamusoro

Zvakaipa:

• Kukura kwenguva refu
• High midziyo zvinodiwa
• Goho rakaderera

4. Solution-Based Method yeZnTe Nanomaterial Synthesis

4.1 Nheyo

Mhinduro-yakavakirwa nzira dzinodzora maitiro ekutanga mumhinduro yekugadzirira ZnTe nanoparticles kana nanowires. A common reaction is:

Zn²⁺ + HTe⁻ + OH⁻ → ZnTe + H₂O

4.2 Detailed Procedure

4.2.1 Kugadzirira kweReagent

1. Zinc Source: Zinc acetate (Zn(CH₃COO)₂·2H₂O), kuchena ≥99.99%.
2. Tellurium Source: Tellurium dioxide (TeO₂), kuchena ≥99.99%.
3. Kuderedza Mumiririri: Sodium borohydride (NaBH₄), kuchena ≥98%.
4. Zvinyungudutsa: Deionized mvura, ethylenediamine, ethanol.
5. Surfactant: Cetyltrimethylammonium bromide (CTAB).

4.2.2 Tellurium Precursor Preparation

1. Solution Kugadzirira: Dissolve 0.1mmol TeO₂ mu 20ml deionized mvura.
2. Kuderedza Kuita: Wedzera 0.5mmol NaBH₄, fambisa magineti kwemaminetsi makumi matatu kugadzira HTe⁻ mhinduro.
   TeO₂ + 3BH₄⁻ + 3H₂O → HTe⁻ + 3B(OH)₃ + 3H₂↑
3. Dziviriro Atmosphere: Chengetedza nitrogen kuyerera kwese kudzivirira oxidation.

4.2.3 ZnTe Nanoparticle Synthesis

1. Zinc Solution Kugadzirira: Dissolve 0.1mmol zinc acetate mu 30ml ethylenediamine.
2. Kusanganisa Reaction: Zvishoma nezvishoma wedzera HTe⁻ mhinduro kune zinc solution, ita pa80 ° C kwemaawa matanhatu.
3. Centrifugation: Mushure mekuita, centrifuge pa10,000rpm kwemaminetsi gumi kuunganidza chigadzirwa.
4. Washing: Kumwe kugeza ne ethanol uye deionized mvura katatu.
5. Kuomesa: Vacuum yakaoma pa60°C kwemaawa matanhatu.

4.2.4 ZnTe Nanowire Synthesis

1. Template Addition: Wedzera 0.2g CTAB kune zinc solution.
2. Hydrothermal Reaction: Chinja mushonga wakasanganiswa kune 50ml Teflon-lined autoclave, ita pa 180°C kwemaawa gumi nemaviri.
3. Post-Processing: Zvakafanana neye nanoparticles.

4.3 Maitiro Parameter Optimization

1. Kudzora Kwekushisa: 80-90 ° C ye nanoparticles, 180-200 ° C ye nanowires.
2. pH Kukosha: Chengetedza pakati pe9-11.
3. Reaction Time: 4-6 maawa e nanoparticles, 12-24 maawa e nanowires.

4.4 Zvakanakira uye Zvakaipa Ongororo

Zvakanakira:

• Low-temperature reaction, simba rekuchengetedza
• Controllable morphology uye saizi
• Inokodzera kugadzirwa kukuru

Zvakaipa:

• Zvigadzirwa zvinogona kunge zvine tsvina
• Inoda post-processing
• Lower crystal quality

5. Molecular Beam Epitaxy (MBE) yeZnTe Thin Film Kugadzirira

5.1 Nheyo

MBE inokura ZnTe single-crystal matete mafirimu nekutungamira mamolecular matanda eZn neTe pane substrate pasi peyakanyanya-yakakwirira vacuum mamiriro, inonyatso kudzora danda flux ratios uye substrate tembiricha.

5.2 Detailed Procedure

5.2.1 Kugadzirira Kwehurongwa

1. Vacuum System: Base vacuum ≤1×10⁻⁸Pa.
2. Kugadzirira Kunobva:
   • Zinc sosi: 6N yakakwirira-kuchena zinc muBN crucible.
   • Tellurium sosi: 6N yakakwirira-kuchena tellurium muPBN crucible.
3. Kugadzirira kwe Substrate:
   • Inowanzo shandiswa GaAs(100) substrate.
   • Substrate kuchenesa: Organic solvent kuchenesa → acid etching → deionized mvura yekugeza → nitrogen kuomesa.

5.2.2 Nzira yeKukura

1. Substrate Outgassing: Bika pa200 ° C kweawa imwe kubvisa pamusoro adsorbates.
2. Oxide Removal: Kupisa kusvika 580°C, bata kwemaminetsi gumi kuti ubvise okisidhi yepasi.
3. Buffer Layer Kukura: Kutonhora kusvika 300°C, kukura 10nm ZnTe buffer layer.
4. Kukura Kukuru:
   • Substrate tembiricha: 280-320°C.
   • Zinc beam yakaenzana kudzvanywa: 1 × 10⁻⁶Torr.
   • Tellurium beam yakaenzana kumanikidza: 2 × 10⁻⁶Torr.
   • V / III reshiyo inodzorwa pa1.5-2.0.
   • Kukura: 0.5-1μm/h.
5. Annealing: Mushure mekukura, anneal pa250 ° C kwemaminitsi makumi matatu.

5.2.3 In-Situ Monitoring

1. RHEED Monitoring: Chaiyo-nguva yekutarisa kwekuvakwa kwepamusoro uye kukura maitiro.
2. Mass Spectrometry: Monitor molecular beam intensities.
3. Infrared Thermometry: Chaiyo substrate tembiricha yekudzora.

5.3 Maitiro Ekudzora Mapoinzi

1. Tembiricha Kudzora: Substrate tembiricha inokanganisa mhando yekristaro uye pamusoro morphology.
2. Beam Flux Ratio: Te/Zn chiyero inokanganisa mhando dzehurema uye kutariswa.
3. Chiyero cheKukura: Matengo akaderera anovandudza kunaka kwekristaro.

5.4 Zvakanakira uye Zvakaipa Ongororo

Zvakanakira:

• Yakanyatso kuumbwa uye doping control.
• Mafirimu emhando yepamusoro-yekristaro.
• Atomic flat surfaces zvinogoneka.

Zvakaipa:

• Zvishandiso zvinodhura.
• Kukura zvishoma nezvishoma.
• Zvinoda unyanzvi hwepamusoro hwekushanda.

6. Dzimwe Nzira dzeKubatanidza

6.1 Chemical Vapor Deposition (CVD)

1. Precursors: Diethylzinc (DEZn) uye diisopropyltelluride (DIPTe).
2. Reaction Tembiricha: 400-500°C.
3. Mutakuri Gasi: High-kuchena nitrogen kana hydrogen.
4. Dzvinyiriro: Atmospheric kana yakaderera kudzvanywa (10-100Torr).

6.2 Thermal Evaporation

1. Chitubu Chinyorwa: Yakakwira-kuchena ZnTe poda.
2. Vacuum Level: ≤1×10⁻⁴Pa.
3. Evaporation Tembiricha: 1000-1100°C.
4. Substrate Tembiricha: 200-300°C.

7. Mhedziso

Nzira dzakasiyana dziripo dzekugadzira zinc telluride, imwe neimwe iine zvayakanakira nezvayakaipira. Solid-state reaction inokodzera kugadzirira zvinhu zvakawanda, kufambisa kwemhute kunobereka emhando yepamusoro makristasi, nzira dzemhinduro dzakanakira nanomaterials, uye MBE inoshandiswa kune emhando yepamusoro mafirimu matete. Zvishandiso zvinoshanda zvinofanirwa kusarudza nzira yakakodzera zvichienderana nezvinodiwa, nekudzora kwakasimba kwemaitiro paramita kuti uwane yepamusoro-inoshanda ZnTe zvinhu. Mafambiro emangwana anosanganisira yakaderera-tembiricha synthesis, morphology control, uye doping process optimization.